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Advance Technical Information
Polar3TM HiperFETTM Power MOSFETs
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier
IXFQ28N60P3 IXFH28N60P3
VDSS ID25
RDS(on)
= 600V = 28A 260m
TO-3P (IXFQ)
Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL Tsold Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS IDM, VDD VDSS, TJ 150C TC = 25C
Maximum Ratings 600 600 30 40 28 70 14 500 35 695 -55 ... +150 150 -55 ... +150 V V V V A A A mJ V/ns W C C C C C Nm/lb.in. g g
G D
S
Tab
TO-247 ( IXFH)
G
D
S
Tab
G = Gate S = Source
D = Drain Tab = Drain
Features Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages High Power Density Easy to Mount Space Savings
1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque TO-3P TO-247
300 260 1.13 / 10 5.5 6.0
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 2.5mA VGS = 30V, VDS = 0V VDS = VDSS, VGS= 0V TJ = 125C
Characteristic Values Min. Typ. Max. 600 3.0 5.0 100 V V nA
Applications Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls
25 A 1.5 mA 260 m
VGS = 10V, ID = 0.5 * ID25, Note 1
(c) 2011 IXYS CORPORATION, All Rights Reserved
DS100322(03/11)
IXFQ28N60P3 IXFH28N60P3
Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) gfs Ciss Coss Crss RGi td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Gate Input Resistance Resistive Switching Times VGS = 10V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 1 (External) VGS = 0V, VDS = 25V, f = 1MHz VDS = 20V, ID = 0.5 * ID25, Note 1 Characteristic Values Min. Typ. Max. 18 30 3560 360 3.3 1.0 27 18 48 19 50 17 14 0.25 S pF pF pF ns ns ns ns nC nC nC 0.18 C/W C/W TO-3P Outline
Source-Drain Diode Symbol Test Conditions (TJ = 25C Unless Otherwise Specified) IS ISM VSD trr IRM QRM VGS = 0V Repetitive, Pulse Width Limited by TJM IF = IS, VGS = 0V, Note 1 IF = 14A, -di/dt = 100A/s VR = 100V, VGS = 0V 9.0 0.8 Characteristic Values Min. Typ. Max. 28 112 1.4 250 A A V ns A C
1 2 3
TO-247 Outline
P
e
Note
1. Pulse test, t 300s, duty cycle, d 2%.
Terminals: 1 - Gate 3 - Source
2 - Drain
Dim.
ADVANCE TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice.
Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC
Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC
7,157,338B2
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537
IXFQ28N60P3 IXFH28N60P3
Fig. 1. Output Characteristics @ T J = 25C
28 VGS = 10V 8V 50 7V 40 60 VGS = 10V 8V
Fig. 2. Extended Output Characteristics @ T J = 25C
24
20
7V
ID - Amperes
16
ID - Amperes
30
12
6V
20 8 10 5V 0 0 1 2 3 4 5 6 7 8 0 0 5 10 15 20 25 30 5V 6V
4
VDS - Volts
VDS - Volts
Fig. 3. Output Characteristics @ T J = 125C
28 VGS = 10V 7V 3.4 3.0 2.6
Fig. 4. RDS(on) Normalized to ID = 14A Value vs. Junction Temperature
VGS = 10V
24
6V
R DS(on) - Normalized
20
I D = 28A 2.2 1.8 1.4 1.0 I D = 14A
ID - Amperes
16
12
8 5V 4
0.6 0.2 0 2 4 6 8 10 12 14 16 18 -50 -25 0 25 50 75 100 125 150
0
VDS - Volts
TJ - Degrees Centigrade
Fig. 5. RDS(on) Normalized to ID = 14A Value vs. Drain Current
3.4 VGS = 10V 3.0 TJ = 125C 25 30
Fig. 6. Maximum Drain Current vs. Case Temperature
R DS(on) - Normalized
2.6 20 2.2 1.8 TJ = 25C
ID - Amperes
0 10 20 30 40 50 60
15
10
1.4
1.0
5
0.6
0 -50 -25 0 25 50 75 100 125 150
ID - Amperes
TC - Degrees Centigrade
(c) 2011 IXYS CORPORATION, All Rights Reserved
IXFQ28N60P3 IXFH28N60P3
Fig. 7. Input Admittance
50 60 TJ = - 40C 40 TJ = 125C 25C - 40C 30 50 25C
Fig. 8. Transconductance
g f s - Siemens
40 125C 30
ID - Amperes
20
20 10
10
0 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0
0 0 10 20 30 40 50
VGS - Volts
ID - Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
100 90 80 70 10 9 8 7 VDS = 300V I D = 14A I G = 10mA
Fig. 10. Gate Charge
IS - Amperes
60 50 40 30 20 10 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 TJ = 125C TJ = 25C
VGS - Volts
6 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 50
VSD - Volts
QG - NanoCoulombs
Fig. 11. Capacitance
10,000 100
Fig. 12. Forward-Bias Safe Operating Area
RDS(on) Limit
Capacitance - PicoFarads
Ciss 1,000 10 Coss 100
100s
ID - Amperes
1
10 Crss
TJ = 150C TC = 25C Single Pulse 0.1 0 5 10 15 20 25 30 35 40 10 100 1,000 1ms
f = 1 MHz
1
VDS - Volts
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFQ28N60P3 IXFH28N60P3
Fig. 13. Maximum Transient Thermal Impedance
1
Fig. 13. Maximum Transient Thermal Impedance
0.3
AAAAA
0.1
Z(th)JC - C / W
0.01
0.001 0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
(c) 2011 IXYS CORPORATION, All Rights Reserved
IXYS REF: F_28N60P3(K7)03-23-11

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